PART |
Description |
Maker |
RHRU5060 RHRU5050 FN3919 RHRU5040 |
50A, 400V - 600V Hyperfast Diodes 50A 400V - 600V Hyperfast Diodes From old datasheet system
|
HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
|
SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五(DRM)的| 50A条口(T)的有效值|08VARM8 TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50R |
100V 50A Phase Control SCR in a TO-208AC (TO-65) package 800V 50A Phase Control SCR in a TO-208AC (TO-65) package 1000V 50A Phase Control SCR in a TO-208AC (TO-65) package 400V 50A Phase Control SCR in a TO-208AC (TO-65) package 1600V 80A Phase Control SCR in a TO-208AC (TO-65) package 1200V 50A Phase Control SCR in a TO-208AC (TO-65) package 1400V 80A Phase Control SCR in a TO-208AC (TO-65) package 600V 50A Phase Control SCR in a TO-208AC (TO-65) package MEDIUM POWER THYRISTORS Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN
|
IRF[International Rectifier] Vishay Semiconductors
|
PRHMB50A61 |
50A 600V
|
Nihon Inter Electronics Corporation
|
STGY40NC60VD STGY40NC60V |
N-CHANNEL 50A - 600V MAX247 VERY FAST POWERMESH" IGBT N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
6MBI50F-060 |
IGBT(600V 50A)
|
Fuji Electric
|
7MBR50SA060 |
IGBT(600V/50A/PIM)
|
FUJI[Fuji Electric]
|
6MBP50RA06 6MBP50RA060 |
IGBT-IPM(600V/50A)
|
FUJI[Fuji Electric]
|
S50VB60 |
Bridge Diode(600V 50A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|